2SD1830

2SD1830 : Ordering number:EN2214B PNP/NPN Epitaxial Planar Silicon Darlington Transistor 2SB1228/2SD1830 Driver Applications Applications · Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. Package Dimensions unit:mm 2041A [2SB1228/2SD1830] Features · High DC current gain. · Large current capacity and wide ASO. · Low saturation voltage. · Micaless package facilitating mounting. ( ) : 2SB1228 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Co.

2SD1830 : ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= 3V, IC= 4A) ·Large Current Capability and Wide ASO. ·Complement to Type 2SB1228 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in control of motor drivers, printer hammer drivers, relay drivers,and constant-voltage regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 12 A .

2SD1832 : ·High Collector Current:: IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@IC= 3A ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1832 isc website：www.iscsemi.com 1 is.

2SD1833 : TO-220F NPN 。Silicon NPN transistor in a TO-220F Plastic Package.  / Features ,,, 2SB1290 。 Low VCE(sat),excellent DC current gain characteristics, wide SOA, complements the 2SB1290. / Applications 。 General power amplifier applications. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range D 60～120 E 100～200 F 160～320 http://www.fsbrec.com 1/6 2SD1833 Rev.F Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current – Continuous(Pulse) Collector Powe.

2SD1833 : ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 4A ·High Collector Power Dissipation ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A ICM Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 1.5 W 30 150 ℃ Tstg Storage Te.

2SD1834 : Transistors 2SD1834 2SD1468S / 2SD1865 (94S-340-D64) (94L-767-D65) 311 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upo.

2SD1835 : Ordering number:EN2158A PNP/NPN Epitaxial Planar Silicon Transistor 2SB1229/2SD1835 Driver Applications Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment. w w w . D a t a S h e e t 4 U . c o m Package Dimensions unit:mm 2003A [2SB1229/2SD1835] Features · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time. ( ) : 2SB1229 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCB.

2SD1835 : Ordering number : ENN2158A 2SB1229/2SD1835 PNP/NPN Epitaxial Planar Silicon Transistors Driver Applications Applications · Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features · Adoption of FBET, MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching time. Package Dimensions unit:mm 2003B [2SB1229/2SD1835] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 ( ) : 2SB1229 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Tempera.

2SD1838 : .