| Part Number | BUT56 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220C package ·High voltage;high speed ·High power dissipation APPLICATIONS ·Switching mode power supply PINNING PIN 1 2 3 Base Collector;... |
| Features |
BUT56 IC=100mA ;LC=125mH BUT56A IE=1mA ;IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCE=800V; VBE=0 Tj=150 VCE=1000V; VBE=0 Tj=150 IC=1A ; VCE=5V BUT56 hFE-2 DC current gain BUT56A fT Transition frequency IC=3A ; VCE=2V IC=0.5A ;VCE=10V;f=1.0MHz IC=4A ; VCE=5V CONDITIONS
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BUT56 BUT56A
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| File Size | 119.93KB |
| Datasheet |
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BUT56A : BUT56A NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE SC-65 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-EmitterVoltage Emitter-Base voltage Collector Current (DC) Collector Peck Current Base Current (DC) Collector Dissipation (Tc=25°C) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICM IB PC Tj Tstg Rating 1000 450 6 8 10 4 100 150 -65~150 Unit V V V A A A W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C) Characterristic Collector Cutoff Current (VBE=0) Emitter Cutoff Current(IC=0) Collector Emitter Saturation Voltage Base- Emitter Saturation Voltage Current Gain Bandwith Product.
BUT56A : ·With TO-220C package ·High voltage;high speed ·High power dissipation APPLICATIONS ·Switching mode power supply PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolut maximum ratings (Ta=25 ) SYMBOL VCBO PARAMETER BUT56 Collector-base voltage BUT56A BUT56 VCEO VEBO IC ICM IBM Ptot Tj Tstg Collector-emitter voltage BUT56A Emitter-base voltage Collector current Collector current-peak Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base 450 6 8 10 4 100 150 -65~150 V A A A W Open emitter 1000 400 V CONDITIONS VALUE 800 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance juncti.
BUT56AF : ·With TO-220Fa package ·High voltage;high speed ·High power dissipation APPLICATIONS ·Switching mode power supply PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolut maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1000 450 6 8 10 4 50 150 -65~150 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERIS.
BUT56AF : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·High Speed Switching ·High Power Dissipation ·With TO-220Fa Package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching mode power supply applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 50 W 150 ℃ Tstg Storage Tempe.