| Part Number | 2STC4467 |
| Manufacturer | STMicroelectronics |
| Title | High power NPN epitaxial planar bipolar transistor |
| Description | soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar transistor for linear Oamplifier) technology. The resulting transistor Ob... |
| Features |
■ High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed t(s) ■ Typical ft = 20 MHz c ■ Fully characterized at 125 oC roduApplications P ■ Audio power amplifier leteDescription soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar transistor for lin... |
| File Size | 130.11KB |
| Datasheet |
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2STC4468 : The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage. Internal schematic diagram Order codes Part Number 2STC4468 Marking 2STC4468 Package TO-3P Packaging Tube Electrical ratings June 2007 Rev 1 1/9 www.st.com 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 2STC4468 Table 1. Symbol VCBO CEO www.datasheet4u.com Absolute maximum rating Parameter Collector-emitter voltage (IE = 0) Collector-e.