| Part Number | PSMN1R5-25YL |
| Manufacturer | NXP |
| Title | N-channel FET |
| Description | Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and... |
| Features |
and benefits
High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources
1.3 Applications
Class-D amplifiers DC-to-DC converters Motor control Server power supplies
1.4 Quick reference data
Table 1. VDS ID Ptot Quick reference Conditions Tmb =...
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| File Size | 239.39KB |
| Datasheet |
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PSMN1R5-25YL : Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for logic level gate drive sources 1.3 Applications Class-D amplifiers DC-to-DC converters Motor control Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C - - 25 V ID drain current Tmb = 25 °C; VGS = 10 V; [1] - - 100 A see Figure 1; Ptot total power d.