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• 100 V Complementary in SOIC package Low on-resistance Fast switching speed Low voltage (VGS = 4.5 V) gate drive G1 S1 Q1 N-Channel G2 S2 Q2 P-Channel Applications
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ZXMC10A816N8 PDF File
| Part Number | ZXMC10A816N8 |
| Manufacturer | DIODES (https://www.diodes.com/) |
| Title | Dual MOSFET |
| Description | This new generation complementary dual MOSFET features low on-resistance achievable with low gate drive. D1 D2 Features • • • • 100 V Compleme... |
| Features |
low on-resistance achievable with low gate drive.
D1
D2
Features
• • • • 100 V Complementary in SOIC package Low on-resistance Fast switching speed Low voltage (VGS = 4.5 V) gate drive G1 S1 Q1 N-Channel G2 S2 Q2 P-Channel Applications • • • ... |
| Published | Jul 7, 2009 |
| Datasheet |
ZXMC10A816N8 PDF File
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