DatasheetsPDF.com

BLS6G3135-120

NXP Semiconductors
Part Number BLS6G3135-120
Manufacturer NXP (https://www.nxp.com/) Semiconductors
Title LDMOS S-Band radar power transistor
Description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance ...
Features I Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of up to 300 µs with δ of 10 %: N Output power = 120 W N Gain = 11 dB N Efficiency = 43 % I Easy power control I Integrated ESD prot...

Published Jul 29, 2009
Datasheet PDF File BLS6G3135-120 PDF File


BLS6G3135-120
BLS6G3135-120


DigiKey In Stock:


Similar Datasheet




INDEX :57ABCDEFGHIJKLMNOPQRSTUVWXYZ

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)