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2SC1971

Part Number	2SC1971
Manufacturer	Inchange Semiconductor
Title	Silicon NPN Power Transistor
Description	·High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed ...
Features	C=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1971 TYP. MAX UNIT V(BR)CBO Collector-Base Bre...
Published	Sep 1, 2009
Datasheet	2SC1971 PDF File

2SC1971
2SC1971

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Features

C=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1971 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10mA, IE= 0 35 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 17 V V(BR)EBO Emitter-...

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