2SD1126 PDF File
| Part Number | 2SD1126 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Darlington Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Saturation Voltage ·Minimum Lot-to... |
| Features |
BO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 0.1A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 5A; IB= 10mA
VBE(...
|
| Published | Sep 22, 2009 |
| Datasheet |
2SD1126 PDF File
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