| Part Number | KFG1216Q2M |
| Manufacturer | Samsung semiconductor |
| Title | FLASH MEMORY |
| Description | for below operations -. Reset -. Write Protection -. Burst Read Latency -. Dual Operation -. Invalid block definition and Identification method -... |
| Features |
♦ Architecture
• Design Technology: 0.12um • Voltage Supply - 1.8V device(KFG1216Q2M) : 1.7V~1.95V - 2.65V device(KFG1216D2M) : 2.4V~2.9V - 3.3V device(KFG1216U2M) : 2.7V~3.6V • Organization - Host Interface:16bit • Internal BufferRAM(5K Bytes) - 1KB... |
| Published | Jan 25, 2010 |
| Datasheet |
 KFG1216Q2M PDF File
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