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RJH60F5DPK

Renesas Technology
Part Number RJH60F5DPK
Manufacturer Renesas (https://www.renesas.com/) Technology
Title Silicon N-Channel IGBT
Description Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ030...
Features  Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)  Built in fast ...
Published Feb 18, 2010
Datasheet PDF File RJH60F5DPK PDF File

RJH60F5DPK
RJH60F5DPK

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Features

 Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode in one package
 Trench gate and thin wafer technology
 High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = ...


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