| Part Number | TPCP8402 |
| Manufacturer | Toshiba Semiconductor |
| Title | MOSFET |
| Description | TPCP8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) www.DataSheet4U.com TPCP8402 Portable Equipment App... |
| Features |
GSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg −30 −30 ±20 −3.4 −13.6 1.48 1.23 0.58 0.36 0.75 −1.7 0.12 150 −55~150 Rating 30 30 ±20 4.2 16.8 1.48 1.23 W 0.58 0.36 2.86 2.1 mJ A Unit V V V A
JEDEC JEITA TOSHIBA
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Weight: 0.017 g (typ.)
Circuit Configuration
8 7 6 5
Single-devi...
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| File Size | 181.43KB |
| Datasheet |
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TPCP8401 : TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ / π -MOS Ⅵ) www.DataSheet4U.com TPCP8401 ○ Switching Regulator Applications ○ Load Switch Applications • • • • • Lead(Pb)-Free Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel MOS FET for drive Small footprint due to small and thin package Low drain-source ON resistance : P Channel RDS (ON) = 31 mΩ (typ.) Low drain-source ON resistance High forward transfer admittance : P Channel |Yfs| = 13 S (typ.) • • Low leakage current : P Channel IDSS = −10 µA (VDS = −12 V) Enhancement−mode : P Channel Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA) 1．Source(Nch） 5．Gate(Pch) S Unit: mm .
TPCP8403 : TPCP8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8403 Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications • • • • • Lead(Pb)-Free Low drain-source ON resistance : P Channel RDS (ON) = 55 mΩ (typ.) N Channel RDS (ON) = 31 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 6.0 S (typ.) N Channel |Yfs| = 8.6 S (typ.) Low leakage current : P Channel IDSS = −10 μA (VDS = −40 V) N Channel IDSS = 10 μA (VDS = 40 V) Enhancement mode : P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.475 1 4 0.65 2.9±0.1 .
TPCP8404 : TPCP8404 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOⅤ/U-MOSⅣ) TPCP8404 Portable Equipment Applications Motor Drive Applications • Low drain-source ON-resistance : P Channel RDS (ON) = 38 mΩ(typ.) (VGS=−10V) N Channel RDS (ON) = 38 mΩ(typ.) （VGS=10V) High forward transfer admittance : P Channel |Yfs| = 7.3 S (typ.) N Channel |Yfs| = 8 S (typ.) Low leakage current : P Channel IDSS = −10 μA (max) (VDS = −30 V) N Channel IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode : P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) 0.33±0.05 0.05 M A 8 5 Unit: mm 2.4±0.1 0.475 1 4 • • • 0.65 2.9±0.1 B A 0.05 M B 0.8±.
TPCP8405 : MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H) TPCP8405 1. Applications • Cell Phones • Motor Drivers 2. Features (1) Low drain-source on-resistance P-channel RDS(ON) = 24 mΩ (typ.) (VGS = -10 V), N-channel RDS(ON) = 20 mΩ (typ.) (VGS = 10 V) (2) Low leakage current P-channel IDSS = -10 µA (VDS = -30 V), N-channel IDSS = 10 µA (VDS = 30 V) (3) Enhancement mode P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA), N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPCP8405 PS-8 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1 ©2015 Toshiba Corporation 1 Start of commercial production 2009-11 2015-10-21 Rev.3.0 TPCP8.
TPCP8406 : TPCP8406 MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H) TPCP8406 1. Applications • • Cell Phones Motor Drivers 2. Features (1) Low drain-source on-resistance P-channel RDS(ON) = 33 mΩ (typ.) (VGS = -10 V), N-channel RDS(ON) = 24 mΩ (typ.) (VGS = 10 V) (2) Low leakage current P-channel IDSS = -10 µA (VDS = -40 V), N-channel IDSS = 10 µA (VDS = 40 V) (3) Enhancement mode P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA), N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1 PS-8 1 2011-03-14 Rev.2.0 TPCP8406 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwis.
TPCP8407 : MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS ) TPCP8407 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.) (4) Low drain-source on-resistance N-channel MOSFET: RDS(ON) = 29.1 mΩ (typ.) (VGS = 10 V) P-channel MOSFET: RDS(ON) = 43.7 mΩ (typ.) (VGS = -10V) (5) Low leakage current N-channel MOSFET: IDSS = 10 µA (max) (VDS = 40 V) P-channel MOSFET: IDSS = -10 µA (max) (VDS = -40 V) (6) Enhancement mode N-channel MOSFET: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) P-channel MOSFET: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Inter.