• Data masks (DM) for write data
• 1.8 V ± 0.1V VDD for [
–20/
–25]
• 1.8 V ± 0.1V VDDQ for [
–20/
–25]
• Posted CAS by programmable additive latency for better
• DRAM organizati...
HYB18T512161B2F-25 PDF File
| Part Number | HYB18T512161B2F-25 |
| Manufacturer | Qimonda AG |
| Title | 512-Mbit x16 DDR2 SDRAM |
| Description | All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross poi... |
| Features |
The 512-Mbit Double-Data-Rate-Two SDRAM offers the following key features: • Data masks (DM) for write data • 1.8 V ± 0.1V VDD for [ –20/ –25] • 1.8 V ± 0.1V VDDQ for [ –20/ –25] • Posted CAS by programmable additive latency for better • DRAM organizati... |
| Published | Apr 28, 2010 |
| Datasheet |
HYB18T512161B2F-25 PDF File
|
