| Part Number | IXFX140N25T |
| Manufacturer | IXYS |
| Title | GigaMOS Power MOSFET |
| Description | Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK14... |
| Features |
z z z z z
International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on)
Advantages
z
Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS =...
|
| File Size | 162.34KB |
| Datasheet |
|
IXFX140N25T : Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK140N25T IXFX140N25T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 250V 140A 17mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C Maximum Ratings 250 250 ± 20 ± 30 140 380 40 3 960 20 -55 ... +150 150 -55 ... +150 V V V V A A A J W V/ns °C °C °C °C °C Nm/lb.in. N/lb. g g G = Gate S = Source (TAB) D = Drain TAB.