| Part Number | TK5A50D |
| Manufacturer | Toshiba Semiconductor |
| Title | N-Channel MOSFET |
| Description | TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A50D Switching Regulator Applications • Low drain-source ON-resist... |
| Features |
f high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appro...
|
| File Size | 174.11KB |
| Datasheet |
|
TK5A50D : iscN-Channel MOSFET Transistor INCHANGE Semiconductor TK5A50D，ITK5A50D ·FEATURES ·Low drain-source on-resistance: RDS(on) = 1.3Ω (typ.) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 5 IDM Drain Current-Single Pulsed 20 PD Total Dissipation @TC=25℃ 35 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTER.
TK5A50D5 : MOSFETs Silicon N-Channel MOS (π-MOS) TK5A50D5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trrf = 40 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 1.62 Ω (typ.) (3) High forward transfer admittance: |Yfs| = 3.0 S (typ.) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 500 V) (5) Enhancement mode: Vth = 2.5 to 4.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK5A50D5 TO-220SIS 1: Gate (G) 2: Drain (D) 3: Source (S) ©2016-2018 Toshiba Electronic Devices & Storage Corporation 1 2018-06-19 Rev.1.0 TK5A50D5 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics.