| Part Number | IXFR180N10 |
| Manufacturer | IXYS Corporation |
| Title | Power MOSFET |
| Description | HiPerFETTM Power MOSFETs IXFR 180N10 VDSS = 100 ISOPLUS247TM ID25 = 165 (Electrically Isolated Back Surface) Single MOSFET Die Preliminary data R... |
| Features |
W °C °C °C °C V~ g • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<25pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell st... |
| Published | Nov 7, 2010 |
| Datasheet |
 IXFR180N10 PDF File
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