| Part Number | CY62136CV33 |
| Manufacturer | Cypress Semiconductor |
| Title | 2M (128K x 16) Static RAM |
| Description | of read and write modes. • • • • • Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 1... |
| Features |
• Very high speed: 55 ns and 70 ns • Voltage range: — CY62136CV30: 2.7V –3.3V — CY62136CV33: 3.0V –3.6V — CY62136CV: 2.7V –3.6V • Pin-compatible with the CY62136V • Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz — Typical active current: 5.5 mA @ f = fmax (70-ns speed) Low standby ... |
| File Size | 240.39KB |
| Datasheet |
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CY62136CV30 : of read and write modes. • • • • • Functional Description[1] The and CY62136CV are high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. Logic Block Diagram DATA IN DRIVERS A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 ROW DECODER 128K x 16 RAM Array 2048 x 1024 SENSE AMPS I/O0–I/O7 I/O8–I/O15 COLUMN DECODER BHE WE CE OE BLE A12 A13 A11 Note: 1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05199 Rev. *D • 3901 North First Street A14 A15 A16 • San Jose • .
CY62136CV30 : of read and write modes. Functional Description[1] The CY62136CV30 is high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. Logic Block Diagram DATA IN DRIVERS A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 ROW DECODER 128K x 16 RAM Array SENSE AMPS I/O0–I/O7 I/O8–I/O15 COLUMN DECODER BHE WE CE OE BLE A11 A12 A13 A14 A15 Note: 1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com. A16 Cypress Semiconductor Corporation Document #: 38-05199 Rev. *E • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600 Rev.