MGF4941AL PDF File
| Part Number | MGF4941AL |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Title | SUPER LOW NOISE InGaAs HEMT |
| Description | The MGF4941AL super-low noise HEMT (High Electron Mobility Transistor) is designed for use in Ku band amplifiers. Outline Drawing FEATURES Low n... |
| Features |
Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.)
Fig.1
APPLICATION
L to K band low noise amplifiers
QUALITY GRADE
GG GD-32
RECOMMENDED BIAS CONDITIONS
VDS=2V , ID=10mA
MITSUBISHI Proprietary
Not...
|
| Published | Mar 6, 2011 |
| Datasheet |
MGF4941AL PDF File
|
