Part Number | DE275-501N16A |
Manufacturer | IXYS Corporation |
Title | RF Power MOSFET |
Description | Directed Energy, Inc. An DE275-501N16A RF Power MOSFET Preliminary Data Sheet IXYS Company N-Channel Enhancement Mode Avalanche Rated Low Qg an... |
Features |
SG1 SG2 GATE
= = = =
500 V 16 A .5 Ω 375 W
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°...
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Published | Apr 28, 2011 |
Datasheet | DE275-501N16A PDF File |