Part Number | 2SA1109 |
Manufacturer | Inchange Semiconductor |
Title | POWER TRANSISTOR |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min.) ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance... |
Features |
e
IC= -1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
VBE(on) Base-Emitter On Voltage
IC= -5A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -180V; IE= 0
IEB...
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Published | Jul 4, 2011 |
Datasheet | 2SA1109 PDF File |