Part Number | 2SA650 |
Manufacturer | Inchange Semiconductor |
Title | PNP Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device perfor... |
Features |
= -1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A; IB= -0.5A
ICBO
Collector Cutoff Current
VCB= -150V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC C...
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Published | Jul 4, 2011 |
Datasheet | 2SA650 PDF File |