2SD1841

2SD1840 : Ordering number : EN3259A 2SB1230 / 2SD1840 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1230 / 2SD1840 High-Current Switching Applications Applications • Motor drivers, relay drivers, converters and other general high-current switching applications. Features • Large current capacity and wide ASO. • Low saturation voltage. Specifications ( ) : 2SB1230 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25°C Elec.

2SD1840 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB1230 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for motor drivers, converters and other general high-current switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 15 A ICP Collector Current-Pulse 25 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ T.

2SD1841 : Ordering number:EN3260A 2SB1231 : PNP Epitaxial Planar Silicon Transistor 2SD1841 : NPN Triple Diffused Planar Silicon Transistor 2SB1231/2SD1841 100V/25A Switching Applications w w w . D a t a S h e e t 4 U . n e t Applications Package Dimensions unit:mm 2022A [2SB1231/2SD1841] · Motor drivers, relay drivers, converters, and other general high-current switching applications. Features · Large current capacity and wide ASO. · Low saturation voltage. ( ) : 2SB1231 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Curr.

2SD1842 : Ordering number:EN3261A 2SB1232 : PNP Epitaxial Planar Silicon Transistor 2SD1842 : NPN Triple Diffused Planar Silicon Transistor 2SB1232/2SD1842 100V/40A Switching Applications Applications · Motor drivers, relay drivers, converters, and other general high-current switching applications. Package Dimensions unit:mm 2022A [2SB1232/2SD1842] Features · Large current capacity and wide ASO. · Low saturation voltage. ( ) : 2SB1232 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25˚C Pl arameter CV ollector-to-Base Voltage CV ollector-to-Emitter Voltage EV mitter-to-Base Voltage CI ollector Current CI ollector Current (Pulse) BI ase Current C.

2SD1843 : of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks o.

2SD1845 : 2SD1845 Unit: mm s q q 21.0± 0.5 15.0± 0.2 0.7 15.0± 0.3 11.0± 0.2 5.0± 0.2 3.2 q q q q φ3.2± 0.1 16.2± 0.5 3.2 2.3 2.0± 0.2 2.0± 0.1 0.6± 0.2 Solder Dip 1.1± 0.1 s (TC=25˚C) TC=25°C Ta=25°C s (TC=25˚C) の し 、 ht て tp :// は w ホ w w ー 、 .s ム と em ペ ic ー on ジ し .p を て an ご い as ま 、 on く す ic だ 。 .c さ o. い を jp 。 5.45± 0.3 10.9± 0.5 2 VCBO VCES VCEO VEBO ICP IC IB 1500 1500 700 7 7 V V V V A A A 2.5 1.5 60 3 150 –55 ~ +150 ICBO VEBO hFE VCE(sat) VBE(sat) fT tstg tf tstg tf VF Lleak = 5µH VCC = 200V 1 3 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(b) PC Tj C B W E ˚C ˚C Tstg VCB = 750V, IE = 0 10 1 µA mA V VCB = 1500V, IE = 0.

2SD1845 : ·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 2.5 A ICM Collector Current-Peak 7 A IB Base Current- Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 3 W 60 150 ℃ Tstg Storage Temperature.

2SD1846 : ·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3.5 A ICM Collector Current-Peak 10 A IB Base Current- Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 3 W 60 150 ℃ Tstg Storage Temperatur.

2SD1846 : ·With TO-3PFa package ·High voltage,high speed ·Built-in damper diode ·Wide area of safe operation APPLICATIONS ·Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current -peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Max.operating junction temperature Storage temperature 60 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7 3.5 10 1.5 3 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transi.

2SD1847 : ·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 15 A IB Base Current- Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2 A 3 W 100 150 ℃ Tstg Storage Temperature R.

2SD1848 : ·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 18 A IB Base Current- Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 2.5 A 3 W 100 150 ℃ Tstg Storage Temperature.

2SD1849 : ·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1300 V VCES Collector-Emitter Voltage 1300 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 20 A IB Base Current- Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 3 W 120 150 ℃ Tstg Storage Temperature R.

2SD1849 : ·With TO-3PFa package ·High voltage,high speed ·Built-in damper diode ·Wide area of safe operation APPLICATIONS ·Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Max.operating junction temperature Storage temperature 120 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 1500 700 7 7 3 W UNIT V V V A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified P.