| Part Number | BU608D |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 0.5μs(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 6A ·Minimum Lot-to-Lot ... |
| Features |
TIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0
200
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 6A; IB= 1.2A
1.5
V
hFE
DC Current Gain
IC= 7A; VCE= 2V;
4.3
ICEV
Collector C...
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| File Size | 207.11KB |
| Datasheet |
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BU608 : ·High Voltage: VCEV= 400V(Min) ·Fast Switching Speed- : tf= 0.5μs(Max) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 4 A 90 W 150 .
BU608 : ·With TO-3 package ·High voltage ·Wide area of safe operation APPLICATIONS ·For TV horizontal deflection output applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 100 200 -65~200 Open emitter Open base Open collector CONDITIONS VALUE 400 200 7 7 2.5 W UNIT V V V A THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.75 UNIT /W SavantI.
BU6084B : R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU6084B Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Computer aided power and Switch-mode power supplies 2．FEATURES High voltage capability Features of good high temperature High switching speed 3．PACKAGE TO-220A 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL Colle.
BU6084BF : R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. BU6084BF Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Computer aided power and Switch-mode power supplies 2．FEATURES High voltage capability Features of good high temperature High switching speed 3．PACKAGE 1 2 TO-220FH 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL .