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RD100HHF1

Mitsubishi Electric Semiconductor
Part Number RD100HHF1
Manufacturer Mitsubishi Electric Semiconductor
Title MOS FET
Description RD100HHF1 is a MOS FET type transistor specifically designed for HF High power amplifiers applicatio...
Features 9.6+/-0.3 0.1 -0.01 3 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7 APPLICATION For output stage of high power amplifiers i...
Published Jan 9, 2012
Datasheet PDF File RD100HHF1 PDF File


RD100HHF1
RD100HHF1

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Features
9.6+/-0.3 0.1 -0.01 3 +0.05 R1.6+/-0.15 4.5+/-0.7 6.2+/-0.7 APPLICATION For output stage of high power amplifiers in HF Band mobile radio sets. 5.0+/-0.3 18.5+/-0.3 PIN 1.DRAIN 2.SOURCE 3.GATE UNIT:mm ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS...



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