| Part Number | PMD1602K |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Darlingtion Power Transistor |
| Description | ·High DC current gain ·Collector-Emitter Breakdown VoltageV(BR)CEO= 80V(Min) ·Complement to type PMD1702K APPLICATIONS ·Designed for general purp... |
| Features |
istor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
PMD1602K
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 100mA; IB= 0
80
V
V(BR)CER
Collector-Emitter Breakdown Voltage
IC= 100mA; RBE= 2.2kΩ
80
V
VCE(sat)
Collector-Emitter Sa...
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| File Size | 111.68KB |
| Datasheet |
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PMD1602K : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .