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2SC3651

Sanyo Semicon Device
Part Number 2SC3651
Manufacturer Sanyo Semicon Device
Title NPN Transistor
Description Ordering number:EN1779A NPN Epitaxial Planar Silicon Transistor 2SC3651 High hFE, Low-Frequency Gen...
Features · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO≥100V). · Low collector-to-emitter saturation vo...
Published Mar 22, 2005
Datasheet PDF File 2SC3651 PDF File


2SC3651
2SC3651

Features

· High DC current gain (hFE=500 to 2000).
· High breakdown voltage (VCEO≥100V).
· Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
· High VEBO (VEBO≥15V).
· Very small size making it easy to provide high- density, small-sized hybrid IC’s....


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