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RJH30H2DPK-M0

Renesas
Part Number RJH30H2DPK-M0
Manufacturer Renesas (https://www.renesas.com/)
Title High Speed Power Switching
Description of circuits, software and other related information in this document are provided only to illustrat...
Features      Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = ...
Published Jul 20, 2012
Datasheet PDF File RJH30H2DPK-M0 PDF File


RJH30H2DPK-M0
RJH30H2DPK-M0

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Features





 Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tr = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Built-in Fast Recovery Diode: V...



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