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RJH1CM6DPQ-E0

Renesas
Part Number RJH1CM6DPQ-E0
Manufacturer Renesas (https://www.renesas.com/)
Title IGBT
Description of circuits, software and other related information in this document are provided only to illustrat...
Features  Short circuit withstand time (10 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC =...
Published Jul 20, 2012
Datasheet PDF File RJH1CM6DPQ-E0 PDF File


RJH1CM6DPQ-E0
RJH1CM6DPQ-E0

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Features

 Short circuit withstand time (10 s typ.)
 Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)
 Built-in fast recovery diode (trr = 200 ns typ.) in one package
 Trench gate and thin wafer techn...



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