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RJH65S04DPQ-A0

Renesas
Part Number RJH65S04DPQ-A0
Manufacturer Renesas (https://www.renesas.com/)
Title IGBT
Description of circuits, software and other related information in this document are provided only to illustrat...
Features  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fas...
Published Jul 21, 2012
Datasheet PDF File RJH65S04DPQ-A0 PDF File


RJH65S04DPQ-A0
RJH65S04DPQ-A0

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Features

 Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
 Built in fast recovery diode in one package
 Trench gate and thin wafer technology
 High speed switching tf = 80 ns typ. (at CC = 300 V, VGE...



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