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2N6052

Part Number	2N6052
Manufacturer	ON Semiconductor (https://www.onsemi.com/)
Title	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
Description	2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designe...
Features	• High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc • Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 1...
Published	Mar 22, 2005
Datasheet	2N6052 PDF File

2N6052
2N6052

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Features

• High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc
• Collector−Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 100 Vdc (Min)
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• This is a Pb−Free Device* MAXIMUM RATINGS (No...

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