| Part Number | BUV26AF |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 90V(Min)- BUV26F 100V(Min)- BUV26AF ·High Switching Speed APPLICATIONS ·Designed for fast switc... |
| Features |
isc Website：www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.co.kr/
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER BUV26F IC= 0.2A ;IB= 0; L= 25mH
B
BUV26F/AF
CONDITIONS
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| File Size | 194.88KB |
| Datasheet |
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BUV26A : ·With TO-220C package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (peak) Base current Base current (peak) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 200 100 5 14 25 4 6 65 150 -65~150 UNIT V V V A A A .
BUV26A : SEMICONDUCTORS BUV26 – BUV26A SILICON POWER TRANSISTORS High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Value Symbol VCBO VCEO VEBO IC ICM IB IBM Pt Tj Tstg Ratings BUV26 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Base Current Base Current Power Dissipation Junction Temperature Storage Temperature range tp = 10ms 85 150 tp = 10ms IE = 0 IB = 0 IC = 0 www.DataSheet.net/ Unit BUV26A 200 100 5 14 25 4 6 65 V V V A A A A W °C -65 to 15.