| Part Number | MBR40040CTR |
| Manufacturer | Naina Semiconductor |
| Title | (MBR40020CT - MBR40040CTR) Schottky Power Diode |
| Description | Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR40020CT... |
| Features |
• • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR40020CT thru MBR40040CTR Silicon Schottky Diode, 400A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC... |
| File Size | 184.33KB |
| Datasheet |
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MBR40040CT : MCC Features • • • • omponents 21201 Itasca Street Chatsworth !"# $ % !"# MBR40020CT THRU MBR300100CT 400 Amp Schottky Barrier Rectifier 20 to 100 Volts FULL PACK Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection Low power loss high efficiency High surge capacity, High current capability Maximum Ratings • • Operating Temperature: -65°C to +150°C Storage Temperature: -65°C to +150°C Maximum Recurrent Peak Reverse Voltage 20V 30V 35V 40V 45V 60V 80V 100V Maximum DC Blocking Voltage 20V 30V 35V 40V 45V 60V 80V 100V MCC Part Number MBR40020CT MBR40030CT MBR40035CT MBR40040CT MBR40045CT MBR4.
MBR40040CT : Naina Semiconductor Ltd. Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM MBR40020CT thru MBR40040CTR Silicon Schottky Diode, 400A TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average forward current Non-repetitive forward surge current, half sinewave Symbol VRRM VRMS VDC IF(AV) TC ≤ 125 oC TC = 25 oC tp = 8.3 ms Conditions MBR40020CT (R) 20 14 20 400 MBR40030CT MBR40035CT (R) (R) 30 21 30 400 35 25 35 400 MBR40040CT (R) 40 28 40 400 Units V V V A IFSM 3000 http://www.DataSheet4U.net/ 3000 3000 3000 A Electrical.
MBR40040CT : Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .
MBR40040CT : MBR40020CT thru MBR40040CTR Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Twin Tower Package VRRM = 20 V - 40 V IF(AV) = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol VRRM VRMS VDC Tj Tstg Conditions MBR40020CT(R) MBR40030CT(R) MBR40035CT(R) MBR40040CT(R) 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 Unit V V V °C °C Electrical characteristics, at Tj = 25 °C, unless.
MBR40040CTR : Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .
MBR40040CTR : MBR40020CT thru MBR40040CTR Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Twin Tower Package VRRM = 20 V - 40 V IF(AV) = 400 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol VRRM VRMS VDC Tj Tstg Conditions MBR40020CT(R) MBR40030CT(R) MBR40035CT(R) MBR40040CT(R) 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 Unit V V V °C °C Electrical characteristics, at Tj = 25 °C, unless.