CW24C08

CW24C02 : The CW24C02/04/08/16 is Electrically Erasable PROM. The device is organized as one block of 256/512/1024/2048 x 8-bit memory with 2-wire serial interface. Low-voltage design permits operation down to 1.8V, with standby and active currents of only 1μA and 1mA respectively. The CW24C02/04/08/16 also has a page write capability for up to 8/16/16/16 bytes of data. PIN CONFIGURATION A0 A1 A2 GND 1 2 3 4 8 VCC WP SCL SDA C02 7 6 5 NC 1 2 3 8 VCC WP SCL FEATURES A1 A2 C04 7 6 ● Wide Voltage Operation VCC= 1.8V to 5.5V GND 5 4 SDA ● Low-power technology - 1mA Active Current Typical - 1μA Standby Current Typical VCC NC 8 1 ● Internally Organized: WP NC 7 2 - CW24C02, 256 X 8 (2K bits) C08.

CW24C04 : The CW24C02/04/08/16 is Electrically Erasable PROM. The device is organized as one block of 256/512/1024/2048 x 8-bit memory with 2-wire serial interface. Low-voltage design permits operation down to 1.8V, with standby and active currents of only 1μA and 1mA respectively. The CW24C02/04/08/16 also has a page write capability for up to 8/16/16/16 bytes of data. PIN CONFIGURATION A0 A1 A2 GND 1 2 3 4 8 VCC WP SCL SDA C02 7 6 5 NC 1 2 3 8 VCC WP SCL FEATURES A1 A2 C04 7 6 ● Wide Voltage Operation VCC= 1.8V to 5.5V GND 5 4 SDA ● Low-power technology - 1mA Active Current Typical - 1μA Standby Current Typical VCC NC 8 1 ● Internally Organized: WP NC 7 2 - CW24C02, 256 X 8 (2K bits) C08.