| Part Number | SH8M14 |
| Manufacturer | Rohm |
| Title | Nch+Pch MOSFET |
| Description | Data Sheet 4V Drive Nch + Pch MOSFET SH8M14 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Hig... |
| Features |
1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive). Dimensions (Unit : mm) SOP8 (8) (5) (1) (4) Application Switching Packaging specifications Type SH8M14 Package Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) Absolut... |
| File Size | 1.37MB |
| Datasheet |
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SH8M11 : Data Sheet 4V Drive Nch + Pch MOSFET SH8M11 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive). Dimensions (Unit : mm) SOP8 (8) (5) (1) (4) Application Switching Packaging specifications Type SH8M11 Package Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS ID IDP *1 Is Isp.
SH8M12 : Data Sheet 4V Drive Nch + Pch MOSFET SH8M12 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive). Dimensions (Unit : mm) SOP8 (8) (5) (1) (4) Application Switching Inner circuit (8) (7) (6) (5) Packaging specifications Type SH8M12 Package Code Basic ordering unit (pieces) Taping TB 2500 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗2 ∗2 ∗1 (1) (2) (3) ∗1 (4) Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation .
SH8M13 : Data Sheet 4V Drive Nch + Pch MOSFET SH8M13 Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Dimensions (Unit : mm) SOP8 (8) (5) (1) (4) Application Switching Packaging specifications Type SH8M13 Package Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Total power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board. Symbol VDSS VG.