SH8M3

SH8M11 : Data Sheet 4V Drive Nch + Pch MOSFET SH8M11  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive).  Dimensions (Unit : mm) SOP8 (8) (5) (1) (4)  Application Switching  Packaging specifications Type SH8M11 Package Code Basic ordering unit (pieces) Taping TB 2500   Inner circuit (8) (7) (6) (5)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS ID IDP *1 Is Isp.

SH8M12 : Data Sheet 4V Drive Nch + Pch MOSFET SH8M12  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive). Dimensions (Unit : mm) SOP8 (8) (5) (1) (4)  Application Switching Inner circuit (8) (7) (6) (5)  Packaging specifications Type SH8M12 Package Code Basic ordering unit (pieces) Taping TB 2500  (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗2 ∗2 ∗1 (1) (2) (3) ∗1 (4)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation .

SH8M13 : Data Sheet 4V Drive Nch + Pch MOSFET SH8M13  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).  Dimensions (Unit : mm) SOP8 (8) (5) (1) (4)  Application Switching  Packaging specifications Type SH8M13 Package Code Basic ordering unit (pieces) Taping TB 2500   Inner circuit (8) (7) (6) (5)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Total power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board. Symbol VDSS VG.

SH8M14 : Data Sheet 4V Drive Nch + Pch MOSFET SH8M14  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive).  Dimensions (Unit : mm) SOP8 (8) (5) (1) (4)  Application Switching  Packaging specifications Type SH8M14 Package Code Basic ordering unit (pieces) Taping TB 2500   Inner circuit (8) (7) (6) (5)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS ID IDP *1 Is Isp.

SH8M2 : 4V Drive Nch+Pch MOSFET SH8M2 Structure Silicon N-channel / P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S protection diode. 3) Small surface mount package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type SH8M2 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) ∗2 ∗2 (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel.

SH8M24 : SH8M24 　　45V Nch+Pch Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Pch 45V -45V 46mΩ 63mΩ ±6A ±6A 3.1W lFeatures 1) Low on - resistance. 2) Small Surface Mount Package (SOP8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lOutline SOP8 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 330 Switching Type Tape width (mm) Basic ordering unit (pcs) 12 2500 Taping code TB Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Tr1:Nch Tr2:Pch SH8M24 Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage .

SH8M31 : SH8M31 　　60V Nch+Pch Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Pch 60V -60V 65mΩ 70mΩ ±4.5A ±4.5A 2.0W lFeatures 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free lOutline SOP8 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 330 Switching Type Tape width (mm) Basic ordering unit (pcs) 12 2500 Taping code TB Marking SH8M31 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Tr1:Nch Tr2:Pch Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage .

SH8M4 : 4V Drive Nch+Pch MOSFET SH8M4 Structure Silicon N-channel / P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type SH8M4 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗2 (1) (2) (3) (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain (8) Tr1 (Nch) Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source .

SH8M41 : SH8M41 　　80V Nch+Pch Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Pch 80V -80V 130mΩ 240mΩ ±3.4A ±2.6A 2.0W lFeatures 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free. lOutline SOP8 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 330 Switching Type Tape width (mm) Basic ordering unit (pcs) 12 2500 Taping code TB Marking SH8M41 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Tr1:Nch Tr2:Pch Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source volta.

SH8M5 : 4V Drive Nch+Pch MOSFET SH8M5 Structure Silicon N-channel / P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type SH8M5 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗2 (1) (2) (3) (4) (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Source (4) Tr2 (Pch) Gate (5) Tr2 (Pch) Drain (6) Tr2 (Pch) Drain (7) Tr1 (Nch) Drain (8) Tr1 (Nch) Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source .

SH8M51 : SH8M51 　　100V Nch+Pch Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Pch 100V -100V 170mΩ 290mΩ ±3.0A ±2.5A 2.0W lFeatures 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free lOutline SOP8 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 330 Switching Type Tape width (mm) Quantity (pcs) 12 2500 Taping code TB Marking SH8M51 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Tr1:Nch Tr2:Pch Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power.

SH8M70 : 10V Drive Nch+Pch MOSFET SH8M70 Structure Silicon N-channel / P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type SH8M70 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the .

SH8MA4 : SH8MA4 　　30V Nch+Pch Power MOSFET Symbol VDSS RDS(on)(Max.) ID PD Tr1:Nch Tr2:Pch 30V -30V 21.4mΩ 29.6mΩ ±9.0A ±8.5A 3.0W lFeatures 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free lOutline SOP8 　 　 　　　　　　 lInner circuit 　　 Datasheet 　 lPackaging specifications Packing Embossed Tape lApplication Reel size (mm) 330 Switching Type Tape width (mm) Quantity (pcs) 12 2500 Taping code TB1 Marking SH8MA4 lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Tr1:Nch Tr2:Pch Unit Drain - Source voltage VDSS 30 -30 V Continuous drain current ID*1 ±9.0 ±8.5 A Pulsed dr.