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2SC3627

Part Number	2SC3627
Manufacturer	Inchange Semiconductor
Title	Silicon NPN Power Transistors
Description	·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Switching Speed ·Minimum Lot-...
Features	N TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 200 V V(BR)CBO Collector-Base Breakdow...
Published	Oct 25, 2013
Datasheet	2SC3627 PDF File

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Features

N TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 200 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 250 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VBE(sat) Base-Emitter ...

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