–60 — — 2000 — — — — Typ — — — — — — 0.3 0.9 Max —
–1.0
–1.0 —
–1.5
–2.0 — — Unit V µA µA V V µs µs Test conditions IC =
–1 mA, RBE = ∞ VCB =
–60 V, IE = 0 VEB =
–7 V, IC = 0 VCE =
–3 V, IC =
–250 mA*1 IC =
–250 m...
2SA1193K PDF File
| Part Number | 2SA1193K |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Title | Silicon PNP Transistor |
| Description | 2SA1193(K) Silicon PNP Epitaxial, Darlington REJ03G0641-0200 (Previous ADE-208-1013) Rev.2.00 Aug.10.2005 Application High gain amplifier Outlin... |
| Features |
O hFE VCE(sat) VBE(sat) ton toff Min –60 — — 2000 — — — — Typ — — — — — — 0.3 0.9 Max — –1.0 –1.0 — –1.5 –2.0 — — Unit V µA µA V V µs µs Test conditions IC = –1 mA, RBE = ∞ VCB = –60 V, IE = 0 VEB = –7 V, IC = 0 VCE = –3 V, IC = –250 mA*1 IC = –250 m... |
| Published | Nov 25, 2013 |
| Datasheet |
2SA1193K PDF File
|
