MUR20040CT

MUR20040CT : MCC Features • • • • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MUR20005CT THRU MUR20060CT 200 Amp Supre Fast Recovery Rectifier 50 to 600 Volts FULL PACK Supre Fast switching for high efficiency High Surge Capability Low Leakage Low Forward Voltage Drop High Current Capability • Operating Temperature: -55°C to +175°C ww.DataSheet4U.com • Storage Temperature: -55°C to +175°C Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V IF(AV) IFSM Maximum DC Blocking Voltage 50V 100V 200V 400V 600V TC= 135°C Maximum Ratings MCC Part Number MUR20005CT MUR20010CT MUR20020CT MUR20040CT MUR20060CT Maximum RMS Volta.

MUR20040CT : Naina Semiconductor Ltd. MUR20040CT thru MUR20060CTR Features Super Fast Recovery Diode, 200A • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Symbol Repetitive peak reverse voltage VRRM RMS reverse voltage VRMS DC blocking voltage VDC Average forward current IF(AV) Non-repetitive forward surge current, half sinewave IFSM Conditions TC ≤ 140 oC TC = 25 oC MUR20040CT(R) 400 280 400 200 800 MUR20060CT(R) 600 420 600 200 800 Units V V V A A Electrical Characteristics (TJ = 25oC unless otherwise specified) Par.

MUR20040CTR : Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .

MUR20040CTR : Naina Semiconductor Ltd. MUR20040CT thru MUR20060CTR Features Super Fast Recovery Diode, 200A • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Symbol Repetitive peak reverse voltage VRRM RMS reverse voltage VRMS DC blocking voltage VDC Average forward current IF(AV) Non-repetitive forward surge current, half sinewave IFSM Conditions TC ≤ 140 oC TC = 25 oC MUR20040CT(R) 400 280 400 200 800 MUR20060CT(R) 600 420 600 200 800 Units V V V A A Electrical Characteristics (TJ = 25oC unless otherwise specified) Par.

MUR20005CT : MCC Features • • • • •
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MUR20005CT THRU MUR20060CT 200 Amp Supre Fast Recovery Rectifier 50 to 600 Volts FULL PACK Supre Fast switching for high efficiency High Surge Capability Low Leakage Low Forward Voltage Drop High Current Capability • Operating Temperature: -55°C to +175°C ww.DataSheet4U.com • Storage Temperature: -55°C to +175°C Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V IF(AV) IFSM Maximum DC Blocking Voltage 50V 100V 200V 400V 600V TC= 135°C Maximum Ratings MCC Part Number MUR20005CT MUR20010CT MUR20020CT MUR20040CT MUR20060CT Maximum RMS Volta.

MUR20005CT : Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .

MUR20005CT : Naina Semiconductor Ltd. MUR20005CT thru MUR20020CTR Features Super Fast Recovery Diode, 200A • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Symbol Conditions MUR20005CT(R) Repetitive peak reverse voltage VRRM 50 RMS reverse voltage VRMS 35 DC blocking voltage Average forward current Non-repetitive forward surge current, half sine-wave VDC IF(AV) IFSM TC ≤ 140 oC TC = 25 oC 50 200 800 MUR20010CT(R) 100 70 100 200 800 MUR20020CT(R) 200 140 200 200 800 Units V V V A A Electrical Characteristics (TJ = 25oC un.

MUR20005CT : Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive MUR20005CT thru MUR20020CTR VRRM = 50 V - 200 V IF(AV) = 200 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR20005CT (R) MUR20010CT (R) MUR20020CT (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 50 35 50 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 200 140 200 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified.

MUR20005CT : ® MOTOROLA Advance Information ULTRAFAST SWITCHMODE POWER RECTIFIERS · .. designed for use in switching power supplies, inverters, and as free wheeling diodes. These state-of-the-art devices have the following features: • Dual Diode Construction - May Be Paralleled For Higher Current Output • Low Leakage Current • Low Forward Voltage • 175°C Operating Junction Temperature • Labor Saving PowERTAP® Package MUR2000SCT MUR20010CT MUR2001SCT MUR20020CT ULTRAFAST RECTIFIERS ZOO AMPERES 50 TO 200 VOLTS MAXIMUM RATINGS MUR Rating Symbol 20005CT 2001 OCT 20015CT 20020CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, (Rate.

MUR20005CTR : Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .

MUR20005CTR : Naina Semiconductor Ltd. MUR20005CT thru MUR20020CTR Features Super Fast Recovery Diode, 200A • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Symbol Conditions MUR20005CT(R) Repetitive peak reverse voltage VRRM 50 RMS reverse voltage VRMS 35 DC blocking voltage Average forward current Non-repetitive forward surge current, half sine-wave VDC IF(AV) IFSM TC ≤ 140 oC TC = 25 oC 50 200 800 MUR20010CT(R) 100 70 100 200 800 MUR20020CT(R) 200 140 200 200 800 Units V V V A A Electrical Characteristics (TJ = 25oC un.