Part Number | K4N51163QC-ZC |
Manufacturer | Samsung |
Title | 512Mbit gDDR2 SDRAM |
Description | FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achie... |
Features |
• 1.8V + 0.1V power supply for device operation • 1.8V + 0.1V power supply for I/O interface • 4 Banks operation • Posted CAS • Programmable CAS Letency : 3,4,5 • Programmable Additive Latency : 0, 1, 2, 3 and 4 • Write Latency (WL) = Read Latency (R... |
Published | Apr 4, 2014 |
Datasheet | K4N51163QC-ZC PDF File |