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IRF820

Harris
Part Number IRF820
Manufacturer Harris
Title N-Channel Power MOSFETs
Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced p...
Features • 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.0Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipatio...
Published Aug 8, 2014
Datasheet PDF File IRF820 PDF File


IRF820
IRF820


Features

• 2.2A and 2.5A, 450V and 500V
• rDS(ON) = 3.0Ω and 4.0Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature - TB334 “Gui...



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