Part Number | BUK752R3-40C |
Manufacturer | NXP Semiconductors |
Title | N-Channel MOSFET |
Description | Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This ... |
Features |
and benefits
AEC Q101 compliant Avalanche robust Suitable for standard level gate drive Suitable for thermally demanding environment up to 175°C rating
1.3 Applications
12V Motor, lamp and solenoid loads High performance automotive power systems High performance Pulse Width Modulation...
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File Size | 230.95KB |
Datasheet |
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BUK752R3-40C : Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Avalanche robust Suitable for standard level gate drive Suitable for thermally demanding environment up to 175°C rating 1.3 Applications 12V Motor, lamp and solenoid loads High performance automotive power systems High performance Pulse Width Modulation applications 1.4 Quick reference data Table 1. VDS ID Ptot QGD Quick reference Conditions Tj ≥ 25 °C; Tj ≤ 175 °C.
BUK752R3-40E : Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-s.