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BUK752R3-40C

Part Number BUK752R3-40C
Manufacturer NXP Semiconductors
Title N-Channel MOSFET
Description Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This ...
Features and benefits „ AEC Q101 compliant „ Avalanche robust „ Suitable for standard level gate drive „ Suitable for thermally demanding environment up to 175°C rating 1.3 Applications „ 12V Motor, lamp and solenoid loads „ High performance automotive power systems „ High performance Pulse Width Modulation...

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BUK752R3-40C : Standard level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Avalanche robust „ Suitable for standard level gate drive „ Suitable for thermally demanding environment up to 175°C rating 1.3 Applications „ 12V Motor, lamp and solenoid loads „ High performance automotive power systems „ High performance Pulse Width Modulation applications 1.4 Quick reference data Table 1. VDS ID Ptot QGD Quick reference Conditions Tj ≥ 25 °C; Tj ≤ 175 °C.

BUK752R3-40E : Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.3 Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-s.




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