| Part Number | TK5P53D |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Description | MOSFETs Silicon N-Channel MOS (π-MOS) TK5P53D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance : RDS... |
| Features |
(1) Low drain-source on-resistance : RDS(ON) = 1.2 Ω (typ.) (2) High forward transfer admittance : |Yfs| = 2.8 S (typ.) (3) Low leakage current : IDSS = 10 µA (max) (VDS = 525 V) (4) Enhancement mode : Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK5P53D
DPAK
1: Ga...
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| File Size | 822.10KB |
| Datasheet |
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TK5P53D : iscN-Channel MOSFET Transistor TK5P53D ·FEATURES ·Low drain-source on-resistance: RDS(on) = 1.5Ω (MAX) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 525 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 5 A IDM Drain Current-Single Pulsed 20 A PD Total Dissipation @TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER .