| Part Number | TK14G65W |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Description | TK14G65W MOSFETs Silicon N-Channel MOS (DTMOS) TK14G65W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source... |
| Features |
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.22 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.69 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain (Heatsink) 3: Source
D2PAK
4. Absolute...
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| File Size | 240.52KB |
| Datasheet |
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TK14G65W : isc N-Channel MOSFET Transistor TK14G65W FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.25Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.69mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 13.7 A IDM Drain Current-Single Pulsed 54.8 A PD Total Dissipation @TC=25℃ 130 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER .
TK14G65W5 : TK14G65W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK14G65W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.69 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source D2PAK 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Rever.
TK14G65W5 : isc N-Channel MOSFET Transistor TK14G65W5 FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.3Ω. ·Enhancement mode: Vth =3 to 4.5V (VDS = 10 V, ID=0.69mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 13.7 A IDM Drain Current-Single Pulsed 54.8 A PD Total Dissipation @TC=25℃ 130 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER R.