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TK35E08N1

Toshiba Semiconductor
Part Number TK35E08N1
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Title Silicon N-Channel MOSFET
Description TK35E08N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK35E08N1 1. Applications • Switching Voltage Re...
Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max...
Published Sep 10, 2014
Datasheet PDF File TK35E08N1 PDF File


TK35E08N1
TK35E08N1


Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 10.0 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain...



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