| Part Number | TK75J04K3Z |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Description | TK75J04K3Z MOSFETs Silicon N-channel MOS (U-MOS) TK75J04K3Z 1. Applications • • Motor Drivers Switching Voltage Regulators 2. Features (1) (2) ... |
| Features |
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain (heatsink) 3: Source
TO-3P(N)
4. Absolute Maximum ...
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| File Size | 246.15KB |
| Datasheet |
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TK75J04K3Z : iscN-Channel MOSFET Transistor TK75J04K3Z ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3mΩ (MAX) ·Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 75 A IDM Drain Current-Single Pulsed 300 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER .