| Part Number | TK16J60W5 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Description | TK16J60W5 MOSFETs Silicon N-Channel MOS (DTMOS) TK16J60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Fast rever... |
| Features |
(1) (2) (3) (4) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 3 to 4.5 V (VDS = 10 V, ID = 0.79 mA)
3. Packaging and Internal Circuit
1: Gate...
|
| File Size | 243.31KB |
| Datasheet |
|
TK16J60W : MOSFETs Silicon N-Channel MOS (DTMOS) TK16J60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA) 3. Packaging and Internal Circuit TK16J60W 1: Gate 2: Drain (Heatsink) 3: Source TO-3P(N) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Rev.
TK16J60W : isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK16J60W ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 15.8 IDM Drain Current-Single Pulsed 63.2 PD Total Dissipation 130 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rt.
TK16J60W5 : isc N-Channel MOSFET Transistor TK16J60W5 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.23Ω. ·Enhancement mode: Vth =3.0 to 4.5V (VDS = 10 V, ID=0.79mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 15.8 A IDM Drain Current-Single Pulsed 63.2 A PD Total Dissipation @TC=25℃ 130 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETE.