| Part Number | TK13J65U |
| Manufacturer | Toshiba Semiconductor |
| Title | MOSFETs |
| Description | TK13J65U MOSFETs Silicon N-Channel MOS (DTMOS) TK13J65U 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-so... |
| Features |
(1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.32 Ω (typ.) High forward transfer admittance: |Yfs| = 8.0 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 650 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate (G) 2: Drain ...
|
| File Size | 234.00KB |
| Datasheet |
|
TK13J65U : isc N-Channel MOSFET Transistor TK13J65U ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤38mΩ. ·Enhancement mode: Vth =3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 13 A IDM Drain Current-Single Pulsed 26 A PD Total Dissipation @TC=25℃ 170 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(c.