MT41K1G8

MT41K1G16 : TwinDie™ 1.35V DDR3L SDRAM MT41K1G16 – 64 Meg x 16 x 2 Banks Description The 16Gb (TwinDie™) 1.35V DDR3L SDRAM uses two Micron 8Gb DDR3L SDRAM x16 die for essentially two ranks of 8Gb DDR3L SDRAM. Refer to Micron’s 8Gb DDR3L SDRAM base part number MT41K512M16 (monolithic) data sheet for the specifications not included in this document. Features • Uses two 8Gb x16 Micron die in one package • Two ranks (includes dual CS#, ODT, CKE, and ZQ balls) • VDD = VDDQ = 1.35V (1.283–1.425V); backward com- patible to 1.5V operation • 1.35V center-terminated push/pull I/O • JEDEC-standard ballout • Low-profile package • TC of 0°C to 95°C – 0°C to 85°C: 8192 refresh cycles in 64ms – 85°C to 95°C: 8192 ref.

MT41K1G4 : DDR3L SDRAM MT41K1G4 – 128 Meg x 4 x 8 banks MT41K512M8 – 64 Meg x 8 x 8 banks MT41K256M16 – 32 Meg x 16 x 8 banks Description DDR3L SDRAM (1.35V) is a low voltage version of the DDR3 (1.5V) SDRAM. Refer to DDR3 (1.5V) SDRAM (Die Rev :E) data sheet specifications when running in 1.5V compatible mode. Features • VDD = VDDQ = 1.35V (1.283–1.45V) • Backward compatible to VDD = VDDQ = 1.5V ±0.075V – Supports DDR3L devices to be backward compatible in 1.5V applications • Differential bidirectional data strobe • 8n-bit prefetch architecture • Differential clock inputs (CK, CK#) • 8 internal banks • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals • Programmable CAS.