| Part Number | SVF1N60MJ |
| Manufacturer | Silan Microelectronics |
| Title | 600V N-CHANNEL MOSFET |
| Description | SVFM/MJ/N/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMO... |
| Features |
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1A,600V,RDS(on)（typ.）=8.2Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF1N60M SVF1N60M SVF1N60MJ SVF1N60N SVF1N60B SVF1N60BTR SVF1N60D SVF1N60DTR Package TO-251-3L TO-251D-3L TO-251J-3L TO-126-3L TO-92-3L TO-92-3...
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| File Size | 529.17KB |
| Datasheet |
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SVF1N60M : SVFM/MJ/N/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 1A,600V,RDS(on)（typ.）=8.2Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF1N60M SVF1N60M SVF1N60MJ .