| Part Number | STD11N65M5 |
| Manufacturer | STMicroelectronics |
| Title | N-channel Power MOSFET |
| Description | These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicr... |
| Features |
Order codes
STB11N65M5 STD11N65M5 STF11N65M5 STP11N65M5 STU11N65M5
VDSS @ RDS(on)
TJmax
max
ID
710 V 0.48 Ω 9 A
■ Worldwide best RDS(on) * area ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested Applications ■ Switching applications TA... |
| File Size | 0.96MB |
| Datasheet |
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STD11N65M2 : These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters. Product status link STD11N65M2 STP11N65M2 STU11N65M2 DS10348 - Rev 6 - June 2019 For further information contact your local STMicroelectronics sales office. www.st.com STD11N65M2, STP11N65M2, STU11N65M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at Tcase = 25 °C ID Drain current (contin.
STD11N65M5 : isc N-Channel MOSFET Transistor ·FEATURES ·With TO-252(DPAK) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGSS Gate-Source Voltage ±25 V ID Drain Current-Continuous;@Tc=25℃ Tc=100℃ 9 5.6 A IDM Drain Current-Single Pulsed 36 A PD Total Dissipation 85 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS .