| Part Number | MDS160 |
| Manufacturer | Naina Semiconductor |
| Title | Three Phase Bridge Rectifier |
| Description | Naina Semiconductor Ltd. MDS160 Three Phase Bridge Rectifier, 160 Amps Features • Easy connections • Excellent power volume ratio • Insulated ty... |
| Features |
• Easy connections • Excellent power volume ratio • Insulated type Voltage Ratings (TJ = 25oC unless otherwise noted) Type number Voltage code VRRM, Max. repetitive peak reverse voltage VRSM, Max. nonrepetitive peak reverse voltage MDS160 80 100 120 140 160 (V) 800 1000 1200 1400 1600 (V) 9... |
| File Size | 315.15KB |
| Datasheet |
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MDS160 : ： ■，2500V ■， ■， ： ■ ■ ■ IO VRRM IFSM I2t 160A 1200~1800V 2.7 KA 38.8 103A2S MDS160 IO VRRM IRRM IFSM I2t VFO rF VFM Rth(j-c) Rth(c-h) （） （） Viso Fm Tsbg Wt Outline （M5） （M6） ，Tc=100℃ VRRM tp=10ms VRsM=VRRM+200V VRM= VRRM 10ms ， VR=0.6 VRRM Tj（℃） 150 150 150 150 150 IFM=160A 180°， 180°， 50HZ ， R.M.S ， t=1min Iiso:1Ma(max) 150 25 M354 160 1200 1600 1800 12 2.7 38.8 0.80 3.1 1.15 1.2 0.14 0.07 2500 4.0 6.0 -40 125 220 A V mA KA 103A2S V mΩ V ℃/W ℃/W V N·m N·m ℃ g 1 http://www.xysrd.com MDS160 2 http://www.xysrd.com （） 、 MDS ~ MDS160 + ~~ - M3 54 ： 、： 1、，。 2、：-40℃∽150℃； 40℃； 86%。 3、，。、 。，６⁄。 、： 1、 MDS （ 2.5KV ），，。 2、、，、。 10μm。 ，。， ，.
MDS1651 : The MDS1651 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. MDS1651 is suitable device for PWM, Load Switching and general purpose applications. Features à VDS = 30V à ID = 11.6A@VGS = 10V à RDS(ON) 17mΩ @VGS = 10V 22mΩ @VGS = 4.5V Applications à Portable application 5(D) 6(D) 7(D) 8(D) D 4(G) 3(S) 2(S) 1(S) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current Power Dissipation (1) Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal .
MDS1652 : The MDS1652 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. Excellent low RDS(ON), low gate charge and operation for Battery Application. Features VDS = 30V ID = 17A @VGS = 10V RDS(ON) 6.5mΩ @VGS = 10V 9.5mΩ @VGS = 4.5V Applications Li-Ion Battery Application Portable Application Notebook PC Application 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) Absoloute Maximun Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current Power Dissipation (1) Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Ta=.
MDS1652E : The MDS1652E uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. Excellent low RDS(ON), low gate charge and operation for Battery Applications. Features VDS = 30V ID = 16A @VGS = 10V RDS(ON) (MAX) 5.0mΩ @VGS = 10V 8.5mΩ @VGS = 4.5V 5(D) 6(D) 7(D) 8(D) 4(G) 3(S) 2(S) 1(S) D G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current (1) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range TA=25oC TA=100oC TA=25oC TA=100oC Thermal Characteristics Character.
MDS1653 : The MDS1653 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. MDS1653 is suitable device for DC-DC Converters and general purpose applications. Features à VDS = 30V à ID = 12A @VGS = 10V à RDS(ON) 12.0mΩ @VGS = 10V 17.5mΩ @VGS = 4.5V Applications à DC-DC Converters 6(D) 5(D) 7(D) 8(D) D 4(G) 2(S)3(S) 1(S) Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current Power Dissipation (1) Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal Resis.
MDS1654 : The MDS1654 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. MDS1654 is suitable device for DC-DC Converters and general purpose applications. Features à VDS = 30V à ID = 15A @VGS = 10V à RDS(ON) 9.5mΩ @VGS = 10V 13.0mΩ @VGS = 4.5V Applications à DC-DC Converters 5(D) 6(D) 7(D) 8(D) D 4(G) 3(S) 2(S) 1(S) G S Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current Power Dissipation (1) Single Pulse Avalanche Energy (2) Junction and Storage Temperature Range Ta=25oC Ta=100oC Ta=25oC Ta=100oC Thermal Chara.
MDS1655 : The MDS1655 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1655 is suitable device for DC-DC Converters and general purpose applications. Features VDS = 30V ID = 11A @VGS = 10V R DS(ON) 17.5mΩ@VGS = 10V 25.0mΩ@VGS = 4.5V Applications DC-DC Converters 5(D) 6(D) 7(D) 8(D) D 4(G) 3(S) 2(S) 1(S) Absoloute Maximun Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current) (1) Characteristics Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy) (2) Junction and Storage Temperature Range Thermal Characteristics Characteristics Thermal.
MDS1656 : The MDS1656 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in on-state resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application. Features VDS = 30V ID = 7.2A @VGS = 10V RDS(ON) 28mΩ @VGS = 10V 42mΩ @VGS = 4.5V Applications Inverters General purpose applications 5(D) 6(D) 7(D) 8(D) D 4(G) 3(S) 2(S) 1(S) G Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Characteristics Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy(2) Junction and Storage Temperature Range TC=25oC TC=70oC TC.